ALD110808PCL Advanced Linear Devices Inc, ALD110808PCL Datasheet - Page 8

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ALD110808PCL

Manufacturer Part Number
ALD110808PCL
Description
MOSFET N-CH 10.6V QUAD 16PDIP
Manufacturer
Advanced Linear Devices Inc
Series
EPAD®r
Datasheet

Specifications of ALD110808PCL

Package / Case
16-DIP (0.300", 7.62mm)
Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Drain To Source Voltage (vdss)
10.6V
Vgs(th) (max) @ Id
820mV @ 1µA
Power - Max
500mW
Mounting Type
Through Hole
Minimum Operating Temperature
0 C
Configuration
Quad
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm (Typ) @ 4.8 V
Forward Transconductance Gfs (max / Min)
0.0014 S
Drain-source Breakdown Voltage
10.6 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1026

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ALD110808PCL
Manufacturer:
Advanced Linear Devices Inc
Quantity:
135
ALD110808/ALD110808A/ALD110908/ALD110908A
S (45°)
e
S (45°)
D
L
H
SOIC-16 PACKAGE DRAWING
b
A
16 Pin Plastic SOIC Package
A
E
C
1
ø
Advanced Linear Devices
Dim
D-16
A
A
C
E
H
ø
S
b
e
L
1
1.35
0.10
0.35
0.18
9.80
3.50
5.70
0.60
0.25
Min
Millimeters
1.27 BSC
10.00
0.937
Max
1.75
0.25
0.45
0.25
4.05
6.30
0.50
0.053
0.004
0.014
0.007
0.385
0.140
0.224
0.024
0.010
Min
0.050 BSC
Inches
0.069
0.010
0.018
0.010
0.394
0.160
0.248
0.037
0.020
8 of 11
Max

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