SI4910DY-T1-GE3 Vishay, SI4910DY-T1-GE3 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI4910DY-T1-GE3
Manufacturer Part Number
SI4910DY-T1-GE3
Description
MOSFET N-CH D-S 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4910DY-T1-E3.pdf
(7 pages)
Specifications of SI4910DY-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
855pF @ 20V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4910DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4910DY-T1-GE3
Manufacturer:
NXP
Quantity:
1 232
Si4910DY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
V
V
Pulse Diode Forward Current
Body Diode Voltage
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
a
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
I
I
C
t
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(off)
GSS
I
DSS
d(on)
Q
DS
g
Q
R
I
SM
t
t
t
t
t
DS
oss
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
/T
/T
J
J
I
F
V
V
V
V
I
= 5 A, dI/dt = 100 A/µs, T
I
DS
D
DS
D
DS
DS
≅ 5 A, V
≅ 5 A, V
= 20 V, V
= 40 V, V
V
= 20 V, V
V
= 20 V, V
V
V
V
V
DS
V
V
V
V
DS
GS
GS
DS
DS
DD
DD
Test Conditions
GS
DS
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 40 V, V
= 5 V, V
I
= 20 V, R
= 20 V, R
GEN
= 10 V, I
= 15 V, I
T
D
GEN
f = 1 MHz
I
S
C
= 250 µA
GS
GS
GS
GS
GS
= 1.5 A
= 25 °C
= 4.5 V, R
, I
= 10 V, R
= 0 V, I
= 0 V, T
D
GS
= 4.5 V, I
= 10 V, I
D
GS
= 250 µA
D
= 250 µA
GS
D
D
L
= ± 16 V
L
= 4.8 A
= 10 V
= 6 A
= 6 A
= 4 Ω
=4 Ω
= 0 V
D
J
= 1 MHz
g
g
D
= 55 °C
D
J
= 1 Ω
= 1 Ω
= 5 A
= 25 °C
= 5 A
Min.
0.6
40
20
0.022
0.026
Typ.
0.73
855
105
9.6
2.3
3.2
2.5
37
- 5
20
65
21
11
24
12
60
22
26
21
13
13
6
6
5
S09-0540-Rev. B, 06-Apr-09
Document Number: 73699
a
0.027
0.032
Max.
14.5
100
2.0
3.8
2.6
1.2
10
32
12
20
36
12
20
90
33
10
20
40
32
1
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
Ω
V
V
A
S
Ω
A
V