SI4910DY-T1-GE3 Vishay, SI4910DY-T1-GE3 Datasheet - Page 4
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SI4910DY-T1-GE3
Manufacturer Part Number
SI4910DY-T1-GE3
Description
MOSFET N-CH D-S 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4910DY-T1-E3.pdf
(7 pages)
Specifications of SI4910DY-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
855pF @ 20V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4910DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4910DY-T1-GE3
Manufacturer:
NXP
Quantity:
1 232
Si4910DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
10
0.1
1
- 50
0
I
D
- 25
= 5 mA
Source-Drain Diode Forward Voltage
I
0.2
D
T
= 250 µA
J
V
= 150 C
SD
0
T
– Source-to-Drain Voltage (V)
Threshold Voltage
0.4
J
– Temperature ( C)
25
0.6
50
T
J
75
= 25 C
0.8
0.01
100
0.1
10
100
0.01
1
1.0
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
125
GS
Single Pulse
T
A
= 25 C
V
1.2
0.1
150
DS
minimum V
DS(on)
– Drain-to-Source Voltage (V)
*
GS
1
at which R
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
50
40
30
20
10
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
0.01
V
GS
T
A
3
– Gate-to-Source Voltage (V)
= 25 C
4
Time (s)
0.1
5
S09-0540-Rev. B, 06-Apr-09
Document Number: 73699
T
A
6
= 125 C
7
1
I
D
8
= 6 A
9
10
10