SI4910DY-T1-GE3 Vishay, SI4910DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4910DY-T1-GE3
• Description: MOSFET N-CH D-S 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4910DY-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4910DY-T1-GE3TR

Si4910DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
10
0.1
1
- 50
0
I
D
- 25
= 5 mA
Source-Drain Diode Forward Voltage
I
0.2
D
T
= 250 µA
J
V
= 150 C
SD
0
T
– Source-to-Drain Voltage (V)
Threshold Voltage
0.4
J
– Temperature ( C)
25
0.6
50
T
J
75
= 25 C
0.8
0.01
100
0.1
10
100
0.01
1
1.0
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
125
GS
Single Pulse
T
A
= 25 C
V
1.2
0.1
150
DS
minimum V
DS(on)
– Drain-to-Source Voltage (V)
*
GS
1
at which R
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
50
40
30
20
10
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
0.01
V
GS
T
A
3
– Gate-to-Source Voltage (V)
= 25 C
4
Time (s)
0.1
5
S09-0540-Rev. B, 06-Apr-09
Document Number: 73699
T
A
6
= 125 C
7
1
I
D
8
= 6 A
9
10
10