SI7923DN-T1-GE3 Vishay, SI7923DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7923DN-T1-GE3
• Description: MOSFET P-CH D-S 30V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7923DN-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 6.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7923DN-T1-GE3TR

Si7923DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
100
0.1
10
Limited by R
-2
* V
Safe Operating Area, Junction-to-Ambient
Limited
I
125
D(on)
GS
Single Pulse
T
A
> minimum V
= 25 °C
V
150
DS
DS(on)
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
1
10
*
-1
GS
BVDSS Limited
at which R
I
DM
10
Limited
DS(on)
50
40
30
20
10
0.001
0
1
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
0.01
100
10
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
-
T
A
t
1
= P
S-83050-Rev. C, 29-Dec-08
1
t
Document Number: 72622
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 68 °C/W
100
600
600