SI7923DN-T1-GE3 Vishay, SI7923DN-T1-GE3 Datasheet - Page 5
![MOSFET P-CH D-S 30V 1212-8 PPAK](/photos/22/17/221719/4472234_sml.jpg)
SI7923DN-T1-GE3
Manufacturer Part Number
SI7923DN-T1-GE3
Description
MOSFET P-CH D-S 30V 1212-8 PPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7923DN-T1-E3.pdf
(6 pages)
Specifications of SI7923DN-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 6.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
6.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7923DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7923DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
71 440
Part Number:
SI7923DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72622.
Document Number: 72622
S-83050-Rev. C, 29-Dec-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7923DN
www.vishay.com
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