IRL530N International Rectifier, IRL530N Datasheet - Page 4

• Manufacturer Part Number: IRL530N
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL530N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 9A. 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530N

IRL530N
1 0 0
1 4 0 0
1 2 0 0
1 0 0 0
1 0
8 0 0
6 0 0
4 0 0
2 0 0
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
V
C
V
Drain-to-Source Voltage
S D
iss
oss
rss
0.6
D S
, S ourc e-to-D rain V oltage (V )
Forward Voltage
V
C
C
C
T = 17 5°C
, D rain-to-S ourc e V oltage (V )
J
G S
iss
rs s
o ss
= 0V ,
= C
= C
= C
0.8
g s
ds
g d
+ C
+ C
1 0
T = 2 5°C
J
g d
g d
1.0
f = 1 M H z
, C
d s
S H O R TE D
1.2
V
G S
= 0V
1.4
1 0 0
A
A
1 0 0 0
1 0 0
1 0
1 5
1 2
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
1
0
T
T
S ing le P u lse
I
C
J
D
= 9.0 A
= 25 °C
= 17 5°C
Fig 6. Typical Gate Charge Vs.
O P E R A TIO N IN TH IS A R E A LIM ITE D
V
D S
1 0
Q , T otal G ate C harge (nC )
Gate-to-Source Voltage
G
, D rain-to-S ource V oltage (V )
1 0
V
V
V
D S
D S
D S
2 0
B Y R
= 8 0V
= 5 0V
= 2 0V
D S (o n )
FO R TE S T C IR C U IT
3 0
S E E FIG U R E 1 3
1 0 0
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
4 0
1 0 0 0
5 0
A
A