IRL530N International Rectifier, IRL530N Datasheet - Page 6

• Manufacturer Part Number: IRL530N
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL530N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 9A. 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530N

IRL530N
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
5.0 V
Fig 13a. Basic Gate Charge Waveform
V
V
I
G
AS
DS
Q
GS
5.0 V
R
G
V
t
DS
p
Q
Charge
Q
GD
G
t
p
I
D.U.T.
AS
L
0.01
V
(BR)DSS
+
V
-
V
DD
DD
Fig 12c. Maximum Avalanche Energy
3 5 0
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
Fig 13b. Gate Charge Test Circuit
5 0
12V
0
2 5
V
GS
V
D D
S tarting T , J unc tion T em perature (°C )
Same Type as D.U.T.
Current Regulator
= 25 V
.2 F
5 0
Vs. Drain Current
50K
3mA
J
Current Sampling Resistors
7 5
.3 F
I
G
1 0 0
D.U.T.
I
1 2 5
D
TO P
B O TTO M
+
-
V
1 5 0
DS
6 .4A
3 .7A
9.0 A
I
D
1 7 5
A