NDF10N62ZG ON Semiconductor, NDF10N62ZG Datasheet - Page 5

• Manufacturer Part Number: NDF10N62ZG
• Description: MOSFET N-CH 620V .75OHM TO220FP
• Manufacturer: ON Semiconductor

Specifications of NDF10N62ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Forward Transconductance Gfs (max / Min): 7.9 S
• Drain-source Breakdown Voltage: 620 V
• Continuous Drain Current: 5.7 A, 10 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 47 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF10N62ZG; NDF10N62ZGOS

0.001
0.01
0.1
10
1
0.000001
20%
10%
Duty Cycle = 50%
2%
5%
1%
Single Pulse Simulation
0.00001
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0001
Figure 13. Thermal Impedance for NDF10N62Z
0.001
Figure 14. Isolation Test Diagram
TYPICAL CHARACTERISTICS
http://onsemi.com
PULSE TIME (sec)
0.01
5
0.1
HEATSINK
0.110″ MIN
LEADS
1
R
qJC
10
Steady State = 3.4°C/W
100
1000