... DS(on) 0.013 0.022 4 TO-252 Drain Connected to Tab Top View SUD50P04-13L-E3 (Lead (Pb)-free) Ordering Information: ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy, b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
... SUD50P04-13L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...
... SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Limited By Package 100 T - Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...
... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73009 Document Number: 73009 S-71660-Rev. B, 06-Aug- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50P04-13L Vishay Siliconix www.vishay.com 5 ...
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...