... D –50 – P-Channel MOSFET Symbol 100 –55 to 175 J stg Symbol Typical t 10 sec thJA thJA Steady State 40 R 1.2 thJC SUD50P04-15 Vishay Siliconix Limit Unit – –50 – –150 –50 b 100 Maximum Unit 18 50 C/W C/W 1.5 www.vishay.com FaxBack 408-970-5600 1 ...
... SUD50P04-15 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance DS(on) a Forward Transconductance b Dynamic Input Capacitance Output Capacitance C Reverse Transfer Capacitance ...
... Drain-to-Source Voltage (V) DS Document Number: 71176 S-00830—Rev. A, 24-Apr-00 New Product 100 0. 0.03 125 C 0.02 0. 100 iss SUD50P04-15 Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 120 I – Drain Current (A) D Gate Charge = 120 ...
... SUD50P04-15 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Maximum Drain Current vs. Case Temperature 100 125 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 ...
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