SI6467BDQ-T1-GE3 Vishay, SI6467BDQ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI6467BDQ-T1-GE3
• Description: MOSFET P-CH G-S 1.8V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6467BDQ-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 850mV @ 450µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -850mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6467BDQ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72087.
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave
10
-2
Pulse Duration (s)
10
-1
1
Vishay Siliconix
Si6467BDQ
www.vishay.com
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