SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet
SI6467BDQ-T1
Specifications of SI6467BDQ-T1
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SI6467BDQ-T1 Summary of contents
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... Si6467BDQ Ordering Information: Si6467BDQ-T1 Si6467BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a ...
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... Si6467BDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72087 S-80682-Rev. D, 31-Mar °C J 0.8 1.0 1.2 Si6467BDQ Vishay Siliconix 6000 5000 C iss 4000 3000 C oss 2000 C 1000 rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si6467BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage (V) ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72087. Document Number: 72087 S-80682-Rev. D, 31-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6467BDQ Vishay Siliconix - www.vishay.com 10 5 ...
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JEDEC Part Number: MO-153 R 0. Corners 0.10 (4 Corners) Document Number: 71201 06-Jul- oK1 ECN: S-03946—Rev. G, 09-Jul-01 L1 DWG: 5844 Package Information Vishay Siliconix Dim Min Nom Max A – – ...
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... Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE FOOT immediately found a home in new small form factor disk drives, computers, and cellular phones. ...
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... CONCLUSION TSSOP power MOSFETs provide a significant reduction in PC board footprint and package height, allowing reduction in board size and application where SOICs will not fit. This is accomplished using a standard IC package and a custom thermal resistance leadframe, combining small size with good power handling capability ...
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... Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...
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RECOMMENDED MINIMUM PADS FOR TSSOP-8 Return to Index Return to Index Document Number: 72611 Revision: 21-Jan-08 0.092 (2.337) 0.026 (0.660) 0.014 0.012 (0.356) (0.305) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 27 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...