SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6467BDQ-T1
• Description: MOSFET 12V 8.0A 1.05W
• Manufacturer: Vishay/Siliconix

Specifications of SI6467BDQ-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.8 A
• Resistance Drain-source Rds (on): 12.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 85 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.05 W
• Rise Time: 85 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 220 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
0.030
0.024
0.018
0.012
0.006
0.000
0.1
30
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 8 A
0.2
On-Resistance vs. Drain Current
= 6 V
12
V
V
6
GS
T
SD
J
Q
= 1.8 V
= 150 °C
- Source-to-Drain Voltage (V)
0.4
g
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
24
12
0.6
36
T
18
J
0.8
= 25 °C
V
V
GS
GS
48
= 2.5 V
= 4.5 V
24
1.0
1.2
60
30
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
1
= 8 A
2
C
= 4.5 V
rss
T
V
V
0
2
J
GS
C
DS
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
4
2 5
Capacitance
3
I
D
5 0
= 8 A
4
Vishay Siliconix
6
Si6467BDQ
7 5
5
C
8
iss
www.vishay.com
100
6
10
125
7
150
12
8
3