SI9424BDY Vishay Siliconix, SI9424BDY Datasheet

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SI9424BDY

Manufacturer Part Number
SI9424BDY
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 72015
S-21785—Rev. A, 07-Oct-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
-20
(V)
0.033 @ V
0.025 @ V
J
a
G
S
S
S
= 150_C)
a
r
Parameter
Parameter
DS(on)
1
2
3
4
_
GS
GS
a
a
= -2.5 V
= -4.5 V
Top View
(W)
P-Channel 20-V (D-S) MOSFET
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
-7.1
- 6.1
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
thJF
I
I
GS
DS
D
S
D
G
stg
P-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
S
D
10 secs
Typical
- 7.1
-5.6
-1.7
2.0
1.3
50
80
30
-55 to 150
-20
-30
"9
Steady State
Maximum
Vishay Siliconix
-5.6
-4.5
-1.0
1.25
62.5
100
0.8
40
Si9424BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1

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SI9424BDY Summary of contents

Page 1

... 70_C 25_C 70_C stg Symbol sec R thJA Steady State Steady State R thJF Si9424BDY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET S D P-Channel MOSFET 10 secs Steady State -20 "9 -5.6 - 7.1 -5.6 -4.5 -30 -1.7 -1.0 2.0 1.25 1.3 0.8 -55 to 150 Typical Maximum 50 62.5 80 100 ...

Page 2

... Si9424BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72015 S-21785—Rev. A, 07-Oct-02 New Product 3600 3000 2400 1800 1200 25_C J 0.8 1.0 1.2 Si9424BDY Vishay Siliconix Capacitance C iss C oss 600 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si9424BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 = 250 -0.0 -0.2 -0.4 -0.6 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 100 125 150 10 Safe Operating Area ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72015 S-21785—Rev. A, 07-Oct-02 New Product - Square Wave Pulse Duration (sec) Si9424BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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