SI9934BDY Vishay Siliconix, SI9934BDY Datasheet

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SI9934BDY

Manufacturer Part Number
SI9934BDY
Description
Dual P-Channel 2.5-V (G-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 72525
S-41578—Rev. C, 23-Aug-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1 ” x 1” FR4 Board.
i
DS
−12
−12
(V)
J
Ordering Information: Si9934BDY—E3
ti
t A bi
G
G
S
S
1
1
2
2
0.056 @ V
0.035 @ V
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Si9934BDY-T1—E3 (with Tape and Reel)
Dual P-Channel 2.5-V (G-S) MOSFET
Top View
SO-8
GS
GS
a
a
= −2.5 V
= −4.5 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−6.4
−5.1
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
1
Symbol
Symbol
T
R
R
R
P-Channel MOSFET
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D
S
1
1
10 secs
Typical
−6.4
−5.1
−1.7
2.0
1.3
55
90
33
−55 to 150
−12
−20
"8
G
2
Steady State
Maximum
P-Channel MOSFET
Vishay Siliconix
−4.8
−3.9
−0.9
62.5
1.1
0.7
110
40
Si9934BDY
D
S
2
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI9934BDY Summary of contents

Page 1

... Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si9934BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Document Number: 72525 S-41578—Rev. C, 23-Aug- 4 25_C J 1.0 1.2 1.4 Si9934BDY Vishay Siliconix Capacitance 2000 1600 C iss 1200 800 C oss 400 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si9934BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 150 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 100 125 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72525 S-41578—Rev. C, 23-Aug-04 −2 − Square Wave Pulse Duration (sec) Si9934BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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