SI9945AEY Vishay Siliconix, SI9945AEY Datasheet
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Manufacturer Part Number
SI9945AEY
Description
Dual N-Channel 60-V (D-S)/ 175C MOSFET
Manufacturer
Vishay Siliconix
Available stocks
Part Number:
SI9945AEY -T1
Part Number:
SI9945AEY -T1-E3
Part Number:
SI9945AEY -T1-E3
Part Number:
SI9945AEY -T1-E3
Part Number:
SI9945AEY -T1-GE3
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambienta
Junction-to-Ambienta
V
Surface Mounted on 1” x 1” FR4 Board
DS
60
60
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Dual N-Channel 60-V (D-S), 175 C MOSFET
J
J
a
a
0.100 @ V
0.080 @ V
= 175 C)
= 175 C)
Top View
r
SO-8
DS(on)
Parameter
Parameter
a
a
GS
GS
( )
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
I
D
(A)
3.7
3.4
Steady State
t
T
T
T
T
G
A
A
A
A
1
= 25 C
= 70 C
= 25 C
= 70 C
10 sec
N-Channel MOSFET
D
1
S
1
D
Symbol
Symbol
1
T
R
R
V
J
V
I
thJA
thJA
P
P
, T
DM
I
I
I
DS
GS
D
D
S
D
D
stg
Typ
G
93
www.vishay.com FaxBack 408-970-5600
2
N-Channel MOSFET
–55 to 175
Vishay Siliconix
Limit
2.4
1.7
60
25
2
D
3.7
3.2
20
2
S
2
Si9945AEY
D
Max
2
62.5
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1
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SI9945AEY Summary of contents
... stg Symbol t 10 sec R R thJA thJA Steady State Si9945AEY Vishay Siliconix N-Channel MOSFET Limit Unit 3 1.7 –55 to 175 C Typ Max Unit 62 ...
... Si9945AEY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance r r DS(on) DS(on) a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
... C rss On-Resistance vs. Junction Temperature 2.4 2 1.6 1.2 0.8 0 –50 –25 Si9945AEY Vishay Siliconix Transfer Characteristics T = – 150 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss – Drain-to-Source Voltage (V) ...
... Si9945AEY Vishay Siliconix Source-Drain Diode Forward Voltage 175 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 A D 0.0 –0.3 –0.6 –0.9 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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