IRF7478 International Rectifier, IRF7478 Datasheet - Page 4

• Manufacturer Part Number: IRF7478
• Description: MOSFET N-CH 60V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7478

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7478

IRF7478
100000
10000
4
1000
100
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
0.6
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
1.0
= C gs + C gd , C ds
Ciss
Coss
Crss
10
°
1.4
f = 1 MHZ
V
1.8
GS
SHORTED
= 0 V
2.2
100
1000
100
10
0.1
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
4.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
°
G
10
, Drain-to-Source Voltage (V)
10
BY R
V
V
V
DS
DS
DS
20
DS(on)
= 48V
= 30V
= 12V
10us
100us
1ms
10ms
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100
30
1000
40