IRF7478 International Rectifier, IRF7478 Datasheet - Page 6

• Manufacturer Part Number: IRF7478
• Description: MOSFET N-CH 60V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7478

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7478

IRF7478
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.028
0.026
0.024
0.022
0.020
0.018
0.016
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(B R )D S S
D.U.T.
10
I
D
and Waveforms
and Waveform
V GS = 4.5V
+
-
V
I D , Drain Current (A)
DS
20
V
R G
GS
20V
V D S
30
t p
V
G
Q
I A S
GS
D .U .T
V GS = 10V
0.01
L
40
Charge
Q
Q
GD
G
50
1 5 V
DRIVE R
+
-
60
V D D
A
Fig 13. On-Resistance Vs. Gate Voltage
0.04
0.03
0.02
0.01
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
25
0.0
Starting T , Junction Temperature ( C)
2.0
V GS, Gate -to -Source Voltage (V)
50
4.0
Vs. Drain Current
J
6.0
75
8.0
I D = 7.0A
100
10.0
www.irf.com
TOP
BOTTOM
12.0
125
14.0
°
1.9A
3.4A
4.2A
I D
16.0
150