NDF11N50ZG ON Semiconductor, NDF11N50ZG Datasheet - Page 4

• Manufacturer Part Number: NDF11N50ZG
• Description: MOSFET N-CH 500V .52OHM TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF11N50ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1375pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF11N50ZG; NDF11N50ZGOS

1000
100
100
0.1
10
10
1
1
1
0
Figure 10. Resistive Switching Time Variation
Figure 7. Drain−to−Source Leakage Current
V
V
I
D
DD
GS
50
= 10.5 A
= 250 V
V
= 10 V
DS
100 150 200 250 300 350 400 450 500
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
T
T
versus Voltage
J
J
= 150°C
= 125°C
10
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Drain−to−Source Voltage versus Total Charge
TYPICAL CHARACTERISTICS
Q
GS
5
Figure 9. Gate−to−Source Voltage and
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10
t
t
t
t
d(off)
r
d(on)
f
Q
V
g
, TOTAL GATE CHARGE (nC)
DS
15
100
4
Q
20
3250
2750
2250
2000
1750
1500
1250
1000
GD
3000
2500
750
500
250
Q
0.1
20
10
T
0
1
25
0.01
0.3
T
30
Figure 11. Diode Forward Voltage versus
J
0.4
= 150°C
V
V
DS
SD
35
Figure 8. Capacitance Variation
C
V
I
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, SOURCE−TO−DRAIN VOLTAGE (V)
T
rss
DS
D
0.5
GS
J
0.1
= 10.5 A
= 25°C
= 250 V
40
125°C
0.6
C
oss
45
Current
0.7
50
1
C
300
250
200
150
100
50
0
25°C
iss
0.8
−55°C
0.9
10
1.0
T
V
f = 1 MHz
GS
J
= 25°C
= 0 V
1.1
100
1.2