NDF11N50ZG ON Semiconductor, NDF11N50ZG Datasheet - Page 5

• Manufacturer Part Number: NDF11N50ZG
• Description: MOSFET N-CH 500V .52OHM TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF11N50ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1375pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF11N50ZG; NDF11N50ZGOS

0.01
0.1
10
1E−06
1
DUTY CYCLE = 0.5
0.05
0.02
0.01
0.2
0.1
1E−05
SINGLE PULSE
Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.01
1E−04
100
0.1
10
1
0.1
V
SINGLE PULSE
T
Figure 12. Maximum Rated Forward Biased
C
GS
= 25°C
v 30 V
V
1E−03
Figure 14. Isolation Test Diagram
TYPICAL CHARACTERISTICS
DS
Safe Operating Area NDF11N50Z
, DRAIN−TO−SOURCE VOLTAGE (V)
1
http://onsemi.com
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1E−02
dc
PULSE TIME (s)
10 ms
5
10
LIMIT
1 ms
1E−01
HEATSINK
0.110″ MIN
LEADS
100 ms
100
10 ms
1E+00
1000
1E+01
R
Steady State
qJC
1E+02
= 3.4°C/W
1E+03