NCP5359AMNR2G ON Semiconductor, NCP5359AMNR2G Datasheet - Page 2

• Manufacturer Part Number: NCP5359AMNR2G
• Description: IC MOSFET GATE DVR DUAL 8-DFN
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5359AMNR2G

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 10.0ns
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 30V
• Voltage - Supply: 10 V ~ 13.2 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFDFN Exposed Pad
• Product: MOSFET Gate Drivers
• Propagation Delay Time: 25 ns
• Supply Voltage (max): 15 V
• Supply Voltage (min): - 0.3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Output Voltage: 35 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PWM
GND
VCC
EN
1 mV
SW
FPWM Comparator
0.8 V < PWM < 2.2 V = 1,
Else 0
l
+
DRVH Comparator
PWM > 2.2 V = 1, Else = 0
+
−
Fault
Q
R
Q
S
ChipEN
Figure 1. Internal Block Diagram
ChipEN
Thermal Shutdown
http://onsemi.com
Pre −Over voltage
Falling Edge Delay
UVLO
Falling Edge Delay
2
Pre−OV
Pre−OV
Level Shift
Driver
Driver
and
EN
Fault
V
CC
ChipEN
2 V/1 V
1.0 V
−
+
+
−
+
l
l
+
BST
DRVH
SW
GND
DRVL