MGA-631P8-TR1G Avago Technologies US Inc., MGA-631P8-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-631P8-TR1G
• Description: IC RF AMP GAAS MMIC 1.6GHZ 8TSLP
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of MGA-631P8-TR1G

• Noise Figure: 0.53dB
• Package / Case: 8-WFDFN Exposed Pad
• Current - Supply: 54mA
• Frequency: 400MHz ~ 1.5GHz
• Gain: 17.5dB
• P1db: 17.5dBm
• Rf Type: CDMA, GPS, GSM, ISM
• Test Frequency: 900MHz
• Voltage - Supply: 4V
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 3800 MHz
• Operating Supply Voltage: 5.5 V
• Supply Current: 67 mA @ 4 V
• Maximum Power Dissipation: 550 mW
• Maximum Operating Temperature: + 150 C
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 1.5GHz
• Operating Supply Voltage (max): 5.5V
• Power Dissipation: 550mW
• Package Type: TSLP
• Mounting: Surface Mount
• Pin Count: 8
• Noise Figure (typ): 0.53@900MHzdB
• Frequency Rf: 1.5GHz
• Noise Figure Typ: 0.53dB
• Filter Terminals: SMD
• Frequency Max: 1.5GHz
• Frequency Min: 400MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-2242-2; MGA-631P8-TR1G

MGA-631P8 Absolute Maximum Rating
Thermal Resistance
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Board temperature T
3. Thermal resistance measured using Infra-Red Microscopy Technique.
Product Consistency Distribution Charts
Figure 1. Gain distribution at 54mA
Figure 3. Id distribution at 54mA
4. Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafer allocated to this product may have nominal values
2
Symbol
Vd
P
P
T
T
diss
j
STG
in,max
250
200
150
100
anywhere between the upper and lower limits. Circuit losses have been de-embedded from actual measurements.
300
250
200
150
100
50
50
0
Process Capability for Gain
40
16
LSL = 16.0,
Nominal = 17.5,
USL = 19.0
LSL = 41,
Nominal = 54,
USL = 67
16.5
45
Parameter
Device Supply Voltage
CW RF Input Power (Vd=4.0V, Vbias=4.0V)
Total Power Dissipation
Junction Temperature
Storage Temperature
[3]
17
50
(Vd = 4.0V, Vbias=4.0V), θ
B
Gain (dB)
is 25 °C. Derate 21.2mW/ °C for T
17.5
Id (mA)
55
CPK Lower = 2.45
CPK = 2.68
Std Dev = 1.26
CPK Lower = 3.72
CPK Upper = 3.85
Std Dev = 0.13
18
60
18.5
65
[2]
19
70
[1]
[4]
JC
= 47 °C/W
B
>124 °C.
Units
V
dBm
W
°C
°C
Figure 4. OIP3U distribution at 54mA
150
120
500
400
300
200
100
90
60
30
0
Absolute Max.
5.5
20
0.55
150
-65 to 150
0.41
Process Capability for NF
31
Nominal = 32.6
LSL = 30.8
0.51
32
OIP3U (dBm)
Nominal = 0.53,
USL = 1.0
NF (dB)
33
CPK Lower = 1.550
0.61
Std Dev = 0.369
CPK=4.04
Std Dev=0.04
34
35
0.71