MGA-30689-BLKG Avago Technologies US Inc., MGA-30689-BLKG Datasheet - Page 2

IC GAIN BLOCK 40DBM LN SOT-89

MGA-30689-BLKG

Manufacturer Part Number
MGA-30689-BLKG
Description
IC GAIN BLOCK 40DBM LN SOT-89
Manufacturer
Avago Technologies US Inc.
Type
General Purpose Amplifierr
Datasheet

Specifications of MGA-30689-BLKG

P1db
22.5dBm
Noise Figure
3.3dB
Package / Case
SOT-89-3
Frequency
40MHz ~ 2.6GHz
Gain
14.6dB
Rf Type
General Purpose
Test Frequency
1.95GHz
Voltage - Supply
5V
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
2600 MHz
Maximum Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Manufacturer's Type
Low Noise Amplifier
Frequency (max)
3GHz
Operating Supply Voltage (max)
5.5V
Package Type
SOT-89
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
3.3@1950MHzdB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Supply
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
516-2211
MGA-30689-BLKG
Absolute Maximum Rating
Product Consistency Distribution Charts
Figure 1. Ids, LSL=80mA , nominal=104mA, USL=125mA
Figure 3. OIP3, LSL=37.5dBm, nominal=41.5dBm
Figure 5. NF, nominal=3.23dB, USL=4dB
2
Symbol
V
P
P
T
T
37
diss
j, max
STG
dd,max
in,max
80
LSL
2.8
LSL
38
3
39
90
Parameter
Device Voltage, RF output to ground
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
3.2
40
[2]
100
3.4
41
T
A
=25
42
°C
3.6
110
[4]
43
[5, 6]
3.8
44
120
4
USL
USL
45
V
Units
dBm
W
°C
°C
13.5
Figure 2. Gain, LSL=13.7dB, nominal=14.6dB, USL=16.7dB
Figure 4. P1dB, LSL=21.2dBm, nominal=22.5dBm
Notes:
5. Distribution data sample size is 500 samples taken from 3 different
6. Measurements were made on a characterization test board, which
21.2
wafer lots and 6 different wafers. Future wafers allocated to this
product may have nominal values anywhere between the upper and
lower limits.
represents a trade-off between optimal OIP3, gain and P1dB. Circuit
trace losses have not been de-embedded from measurements
above.
LSL
LSL
Absolute Max.
5.5
20
0.75
150
-65 to 150
14
21.6
14.5
22
Notes:
2. Operation of this device in excess
3. Thermal resistance measured using
4. This is limited by maximum Vdd and
15
Thermal Resistance
(Vdd = 5V, Ids = 100mA, Tc = 85°C)
of any of these limits may cause
permanent damage.
Infrared measurement technique.
Ids. Derate 18.7 mW/°C for Tc>110°C.
22.4
15.5
16
22.8
[3]
T
jc
= 53.5°C/W
16.5
USL
23.2

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