MWIC930NR1 Freescale Semiconductor, MWIC930NR1 Datasheet - Page 2

• Manufacturer Part Number: MWIC930NR1
• Description: IC PWR AMP RF 30W TO272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWIC930NR1

• Current - Supply: 90mA
• Frequency: 900MHz
• Gain: 30dB
• Package / Case: TO-272-16
• Rf Type: Cellular, GSM, EDGE, N-CDMA
• Voltage - Supply: 26V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Output Power: 30@960MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 27V
• Single Supply Voltage (max): 28V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MWIC930NR1TR

2
MWIC930R1 MWIC930GR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF
Typical Performances (In Freescale Test Fixture) V
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Power Added Efficiency
Input Return Loss
Adjacent Channel Power Ratio
Quiescent Current Accuracy over Temperature
Gain Flatness in 80 MHz Bandwidth @ P
Deviation from Linear Phase in 80 MHz Bandwidth @ P
Delay @ P
Part - to - Part Phase Variation @ P
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
GSM Application
(P
GSM EDGE Application
(P
CDMA Application
(P
(f = 880 MHz)
Stage 1 with 33.2 kΩ Gate Feed Resistors ( - 30 to 115°C)
Stage 2 with 47.5 kΩ Gate Feed Resistors ( - 30 to 115°C)
Select Documentation/Application Notes - AN1955.
Select Documentation/Application Notes - AN1977.
out
out
out
= 30 W CW)
= 15 W CW)
= 5 W CW)
out
= 5 W CW Including Output Matching
Test Methodology
Characteristic
Test Conditions
out
Characteristic
= 5 W CW
Rating
(T
out
C
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
Stage 1, 27 Vdc, I
Stage 2, 27 Vdc, I
Stage 1, 27 Vdc, I
Stage 2, 27 Vdc, I
= 25°C, unless otherwise noted)
= 5 W CW
(2)
DD
= 26 Vdc, I
out
= 5 W CW
DQ
DQ
DQ
DQ
DQ
DQ
DD
= 90 mA
= 240 mA
= 90 mA
= 240 mA
= 90 mA
= 240 mA
DQ1
= 27 Vdc, I
= 90 mA, I
DQ1
Rating
Symbol
ACPR
Delay
ΔI
ΔI
PAE
G
IRL
DQ2
ΔΦ
3
G
= 90 mA, I
1QT
2QT
Φ
ps
F
= 240 mA, 840 MHz<Frequency<920 MHz
DQ2
Symbol
Symbol
Package Peak Temperature
Min
V
R
28
18
—
—
—
—
—
—
—
V
T
DSS
T
= 240 mA, P
θJC
GS
stg
J
260
±2.5
±2.5
Typ
±15
- 12
- 52
0.3
0.6
31
21
M3 (Minimum)
C2 (Minimum)
3
1 (Minimum)
out
- 65 to +175
Value
- 0.5, +65
- 0.5, +15
Value
Class
= 5 W Avg. N - CDMA,
200
Freescale Semiconductor
5.9
1.4
6.5
1.7
6.5
1.8
(1,2)
Max
- 48
—
—
—
—
—
—
—
- 9
RF Device Data
°C/W
(continued)
Unit
Unit
Vdc
Vdc
°C
°C
Unit
Unit
dBc
°C
dB
dB
dB
ns
%
%
°
°