BGA 420 E6327 Infineon Technologies, BGA 420 E6327 Datasheet

AMP SI-MMIC 6V 15MA SOT-343

BGA 420 E6327

Manufacturer Part Number
BGA 420 E6327
Description
AMP SI-MMIC 6V 15MA SOT-343
Manufacturer
Infineon Technologies
Type
General Purpose Amplifierr
Datasheet
1.BGA_420_E6327.pdf (8 pages)

Specifications of BGA 420 E6327

Noise Figure
2.3dB
Current - Supply
5.4mA ~ 8mA
Frequency
100MHz ~ 3GHz
Gain
13dB
P1db
-2.5dB
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Rf Type
Cellular, GSM, CDMA, TDMA, UMTS
Test Frequency
1GHz
Voltage - Supply
3V ~ 6V
Supply Current
8 mA
Maximum Power Dissipation
90 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA 420 E6327
BGA420E6327INTR
BGA420E6327XT
SP000011089
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA420
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1
2
Si-MMIC-Amplifier
Pb-containing package may be available upon special request
For calculation of R
(V
IP
S
Cascadable 50
Unconditionally stable
Gain |S
Noise figure NF = 2.3 dB at 1.8 GHz
Reverse isolation > 28 dB and
Pb-free (RoHS compliant) package
return loss IN / OUT > 12 dB at 1.8 GHz
= 110 °C
3out
D
= 3 V, I
= +13 dBm at 1.8 GHz
21
|
2
D
= 13 dB at 1.8 GHz
= typ. 6.7 mA)
thJA
-gain block
please refer to Application Note Thermal Resistance
in SIEGET
Marking
BLs
2)
25-Technologie
1, IN
1)
Circuit Diagram
Pin Configuration
2, GND 3, OUT 4, VD
1
Symbol
I
V
P
P
T
T
T
R
D
j
A
stg
D
tot
RFin
thJS
IN
4
-65 ... 150
-65 ... 150
1
3
Value
150
15
90
410
6
0
Package
SOT343
GND
2007-07-12
V
D
4
2
BGA420
1
3
2
Unit
mA
V
mW
dBm
°C
K/W
EHA07385
OUT

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BGA 420 E6327 Summary of contents

Page 1

Si-MMIC-Amplifier in SIEGET Cascadable 50 -gain block Unconditionally stable 2 Gain | 1.8 GHz +13 dBm at 1.8 GHz 3out ( typ. 6.7 mA Noise ...

Page 2

Electrical Characteristics at T Parameter AC characteristics Device current Insertion power gain f = 0.1 GHz GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = ...

Page 3

Typical S-Parameters GHz MAG ANG 0.1 0.5686 -8.5 0.5 0.5066 -19.2 0.8 0.4404 -28.7 1 0.3904 -34.6 1.5 0.2841 -50.5 1.8 0.2343 -60.6 1.9 0.2136 -64.1 ...

Page 4

... Package Equivalent Circuit Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 83. 0.16493 IKF = 10.526 BR = 0.25052 IKR = 1.9289 RE = 0.70367 VJE = 0 ...

Page 5

Insertion power gain | parameter VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA dB VD=2V, ID=3,4mA Noise figure ( parameter ...

Page 6

Intercept point at the output (f) 3out parameter VD=5V, ID=12.4mA dBm VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA Intercept ...

Page 7

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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