MGA-71543-TR1G Avago Technologies US Inc., MGA-71543-TR1G Datasheet - Page 5

IC AMP MMIC LNA GAAS 3V SOT-343

MGA-71543-TR1G

Manufacturer Part Number
MGA-71543-TR1G
Description
IC AMP MMIC LNA GAAS 3V SOT-343
Manufacturer
Avago Technologies US Inc.
Series
-r
Datasheet

Specifications of MGA-71543-TR1G

Gain
15.4dB
Rf Type
CDMA, TDMA, PCS
Current - Supply
50mA
Frequency
100MHz ~ 6GHz
Noise Figure
0.8dB
P1db
13.1dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Test Frequency
2.01GHz
Voltage - Supply
2.7V ~ 4.2V
Frequency Range
0.1GHz To 6GHz
Noise Figure Typ
0.8dB
Power Dissipation Pd
200mW
Supply Current
50mA
Supply Voltage Range
2.7V To 4.2V
Manufacturer's Type
Low Noise Amplifier
Number Of Channels
1
Frequency (max)
6GHz
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (typ)
3V
Operating Supply Voltage (max)
4.2V
Package Type
SOT-343
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
1.1@6000MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-71543-TR1G
Manufacturer:
AVAGO
Quantity:
36 000
Part Number:
MGA-71543-TR1G
Manufacturer:
AVAGO
Quantity:
12 100
Part Number:
MGA-71543-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
5
MGA-71543 Typical Performance, continued
T
and was optimized for each frequency with external tuners.
Notes:
4. P1dB measurements were performed with
Figure 15. Input Third Order Intercept Point
vs. Frequency and Current.
Figure 18. Minimum Noise Figure vs. Current
(2 GHz).
Figure 21. Control Voltage vs. Current.
c
passive biasing in Production Test Circuit
(Figure 4.). Quiescent drain current, Idsq, is
set by a fixed Vref with no RF drive applied.
As P1dB is approached, the drain current may
increase or decrease depending on frequency
and DC bias point which typically results in
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
= 25°C, Z
18
15
12
-3
9
6
3
0
0
0
0
0
0
1
o
10
10
= 50, V
FREQUENCY (GHz)
I
I
2
d
d
CURRENT (mA)
CURRENT (mA)
20
20
3
d
= 3V, I
4
30
30
d
= 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system
5
6 mA
10 mA
20 mA
40
40
6
5. P1dB measurements were performed in
Figure 16. Output Power at 1 dB Compression
vs. I
Bias, V
Figure 19. Gain vs. Current and Temperature
(2 GHz).
higher P1dB than if the drain current is
maintained constant by active biasing.
Evaluation Test Circuit with source resistor
biasing which maintains the drain current
near the quiescent value under large signal
conditions.
18
15
12
20
17
14
11
-6
-3
9
3
0
8
5
2
dsq
0
0
ref
Current and Temperature (Passive
Fixed)
10
10
I
dsq
I
[4]
d
CURRENT (mA)
.
CURRENT (mA)
20
20
30
30
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
40
40
Figure 17. Output Power at 1 dB Compression
vs. Current and Temperature (Source Resistor
Bias in Evaluation Circuit)
Figure 20. Input Third Intercept Point vs.
Current and Temperature (2 GHz).
18
15
12
12
-3
-3
9
6
3
0
9
6
3
0
0
0
10
10
I
I
d
d
CURRENT (mA)
CURRENT (mA)
20
20
[5]
.
30
30
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
40
40

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