SPA-1118Z Sirenza Microdevices Inc, SPA-1118Z Datasheet - Page 2

• Manufacturer Part Number: SPA-1118Z
• Description: IC AMP HBT GAAS 850MHZ 8-SOIC
• Manufacturer: Sirenza Microdevices Inc

Specifications of SPA-1118Z

• Current - Supply: 275mA ~ 330mA
• Frequency: 810MHz ~ 960MHz
• Gain: 16.2dB ~ 18.2dB
• Noise Figure: 7.5dB
• P1db: 29.5dBm
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rf Type: General Purpose
• Test Frequency: 810 ~ 960MHz
• Voltage - Supply: 4.75V ~ 5.25V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPA-1118(Z)
850MHz to 950MHz Application Circuit Data, I
2 of 6
Absolute Maximum Ratings
Max Supply Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temp (T
Max Storage Temp
MSL
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
J
Parameter
-T
L
)/R
TH
Adj. Channel Pwr. vs. Channel Output Pwr.
, j-l
CC
J
CC
)
) at V
3 2
3 0
2 8
2 6
2 4
2 2
2 0
-45
-50
-55
-60
-65
-70
-75
) at I
0 .8 5
17
CC
CC
typ.
typ.
18
0 .87
P1dB vs. Frequency
IS-95 @ 880 MHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
19
0 .8 9
dBm
20
GHz
Rating
450
400
350
300
250
200
150
100
+160
+150
21
750
0 .9 1
50
6.0
24
1
0
0
CC
22
=320mA, V
Device Current vs. Source Voltage
0.9 3
25 C
85 C
-4 0 C
1
23
25C
-40C
85C
-40C
85C
25C
0.9 5
24
2
CC
Unit
dBm
mA
V
°C
°C
V
cc
=5V
(V)
3
-1 0
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
2 2
2 0
1 8
1 6
1 4
1 2
1 0
-5
0
0 .85
0 .8 5
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
4
Isolation vs. Frequency, T=25°C
S 1 1
S 1 2
S 2 2
0 .8 7
0 .8 7
Input/Output Return Loss,
Caution! ESD sensitive device.
5
Gain vs. Frequency
0 .8 9
0 .8 9
GHz
GHz
0 .9 1
0 .9 1
0 .9 3
0 .9 3
2 5 C
8 5 C
-4 0 C
0.9 5
0 .9 5
EDS-101427 Rev K