SI1010-A-GM Silicon Laboratories Inc, SI1010-A-GM Datasheet - Page 147
![IC TXRX MCU + EZRADIOPRO](/photos/14/21/142131/42-qfn-series_sml.jpg)
SI1010-A-GM
Manufacturer Part Number
SI1010-A-GM
Description
IC TXRX MCU + EZRADIOPRO
Manufacturer
Silicon Laboratories Inc
Specifications of SI1010-A-GM
Package / Case
42-QFN
Frequency
240MHz ~ 960MHz
Data Rate - Maximum
256kbps
Modulation Or Protocol
FSK, GFSK, OOK
Applications
General Purpose
Power - Output
20dBm
Sensitivity
-121dBm
Voltage - Supply
1.8 V ~ 3.6 V
Current - Receiving
18.5mA
Current - Transmitting
85mA
Data Interface
PCB, Surface Mount
Memory Size
16kB Flash, 768B RAM
Antenna Connector
PCB, Surface Mount
Number Of Receivers
1
Number Of Transmitters
1
Wireless Frequency
240 MHz to 960 MHz
Interface Type
UART, SMBus, SPI, PCA
Output Power
20 dBm
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Maximum Supply Current
4 mA
Minimum Operating Temperature
- 40 C
Modulation
FSK, GFSK, OOK
Protocol Supported
C2, SMBus
Core
8051
Program Memory Type
Flash
Program Memory Size
16 KB
Data Ram Size
768 B
Supply Current (max)
4 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1874-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1010-A-GM
Manufacturer:
Silicon Laboratories Inc
Quantity:
135
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13.1.2. Flash Erase Procedure
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire Flash page, perform the following steps:
1. Save current interrupt state and disable interrupts.
2. Set the PSEE bit (register PSCTL).
3. Set the PSWE bit (register PSCTL).
4. Write the first key code to FLKEY: 0xA5.
5. Write the second key code to FLKEY: 0xF1.
6. Using the MOVX instruction, write a data byte to any location within the page to be erased.
7. Clear the PSWE and PSEE bits.
8. Restore previous interrupt state.
Steps 4–6 must be repeated for each 512-byte page to be erased.
Notes:
13.1.3. Flash Write Procedure
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The recommended procedure for writing a single byte in Flash is as follows:
1. Save current interrupt state and disable interrupts.
2. Ensure that the Flash byte has been erased (has a value of 0xFF).
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 512-byte sector.
8. Clear the PSWE bit.
9. Restore previous interrupt state.
Steps 5–7 must be repeated for each byte to be written.
Notes:
13.2. Non-Volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. MOVX read instructions always target XRAM.
An additional 512-byte scratchpad is available for non-volatile data storage. It is accessible at addresses
0x0000 to 0x01FF when SFLE is set to 1. The scratchpad area cannot be used for code execution.
1. Flash security settings may prevent erasure of some Flash pages, such as the reserved area and the page
2. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
1. Flash security settings may prevent writes to some areas of Flash, such as the reserved area. For a summary
2. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
containing the lock bytes. For a summary of Flash security settings and restrictions affecting Flash erase
operations, please see Section “13.3. Security Options” on page 148.
of Flash security settings and restrictions affecting Flash write operations, please see Section “13.3. Security
Options” on page 148.
Rev. 1.0
Si1010/1/2/3/4/5
147
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