LRI64-SBN18/1GE STMicroelectronics, LRI64-SBN18/1GE Datasheet - Page 10
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LRI64-SBN18/1GE
Manufacturer Part Number
LRI64-SBN18/1GE
Description
IC EEPROM MEMORY TAG WAFER
Manufacturer
STMicroelectronics
Series
LRI64r
Datasheet
1.LRI64-W41GE.pdf
(49 pages)
Specifications of LRI64-SBN18/1GE
Rf Type
Write Once Read Many (WORM)
Frequency
13.56MHz
Features
ISO15693, ISO18000-3
Package / Case
Wafer
For Use With
497-5538 - DEMO KIT LONG-RANGE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Power transfer
4
4.1
4.2
10/49
Power transfer
Power transfer to the LRI64 is accomplished by inductive coupling of the 13.56 MHz radio
signal between the antennas of the LRI64 and VCD. The RF field transmitted by the VCD
induces an AC voltage on the LRI64 antenna, which is then rectified, smoothed and voltage-
regulated. Any amplitude modulation present on the signal is demodulated by the amplitude
shift keying (ASK) demodulator.
Frequency
ISO 15693 and ISO 18000-3 Mode 1 standards define the carrier frequency (f
operating field to be 13.56 MHz±7kHz.
Operating field
The LRI64 operates continuously between H
●
●
A VCD generates a field of at least H
The minimum operating field is H
The maximum operating field is H
min
min
max
and not exceeding H
and has a value of 150mA/m (rms).
and has a value of 5A/m (rms).
min
and H
max
.
max
in the operating volume.
C
) of the
LRI64