T40HFL100S05 Vishay, T40HFL100S05 Datasheet - Page 12

DIODE FAST REC 1000V 40A D-56

T40HFL100S05

Manufacturer Part Number
T40HFL100S05
Description
DIODE FAST REC 1000V 40A D-56
Manufacturer
Vishay
Datasheet

Specifications of T40HFL100S05

Current - Reverse Leakage @ Vr
100µA @ 1000V
Current - Average Rectified (io) (per Diode)
40A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Reverse Recovery Time (trr)
500ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
Single
Mounting Type
Chassis Mount
Package / Case
D-55 T-Module
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
40A
Forward Voltage Vf Max
1.6V
Module Configuration
Single
Peak Reflow Compatible (260 C)
Yes
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.6 V
Recovery Time
500 ns
Forward Continuous Current
40 A
Max Surge Current
500 A
Reverse Current Ir
100 uA
Mounting Style
Stud
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) (max) @ If
-
Lead Free Status / Rohs Status
 Details
Other names
*T40HFL100S05
T40HFL10S05
T40HFL10S05
VS-T40HFL100S05
VS-T40HFL100S05
VST40HFL100S05
VST40HFL100S05

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
T40HFL100S05
Quantity:
134
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
www.vishay.com
12
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E 4
1E 3
1E 2
1E 1
1E 0
1E1
1E 1
1E1
20000
20000
tp
tp
tp
10000
10000
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T 85HFL.. S eries
S inusoidal Pulse
T = 70°C
T 85HFL.. S eries
S inusoidal Pulse
T = 90°C
C
C
T 85HFL.. S eries
S inusoidal Pulse
T = 125 °C
For technical questions within your region, please contact one of the following:
J
5000
5000
1E 2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.01
2500
2500
0.02
Fig. 45 - Maximum Forward Energy Power Loss Characteristics
0.04
1500
1500
0.1
0.2
1000
1000
0.4
(T-Modules), 40 A/70 A/85 A
1
2
1E 3
1E3
1E3
4
400
400
Fig. 43 - Frequency Characteristics
Fig. 44 - Frequency Characteristics
10
Fast Recovery Diodes
20 joules per pulse
200
200
50 Hz
50 Hz
1E4
1E4
1E4
1E 4
1E4
1E4
1E1
1E1
1E 1
1E 1
1E1
1E1
tp
tp
tp
T rapezoid al Pulse
T 85HFL.. S eries
T = 125°C
di/dt = 50A/ µs
T rapezoidal Pulse
T 85HFL.. S eries
T = 70°C
T rapezoidal Pulse
T 85HFL.. S eries
T = 90°C
J
DiodesEurope@vishay.com
C
C
5000
5000
0.01
1E2
1E2
1E 2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.02
2500
2500
0.04
0.1
1500
1500
0.2
0.4
1000
1000
1
2
1E3
1E 3
1E3
4
400
10
400
20 joules per pulse
200
200
Document Number: 93184
50 Hz
50 Hz
Revision: 19-May-10
1E 4
1E 4
1E 4

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