T40HFL100S05 Vishay, T40HFL100S05 Datasheet - Page 2

• Manufacturer Part Number: T40HFL100S05
• Description: DIODE FAST REC 1000V 40A D-56
• Manufacturer: Vishay

Specifications of T40HFL100S05

• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 500ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 40A
• Forward Voltage Vf Max: 1.6V
• Module Configuration: Single
• Peak Reflow Compatible (260 C): Yes
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.6 V
• Recovery Time: 500 ns
• Forward Continuous Current: 40 A
• Max Surge Current: 500 A
• Reverse Current Ir: 100 uA
• Mounting Style: Stud
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Forward (vf) (max) @ If: -
• Lead Free Status / Rohs Status: Details
• Other names: *T40HFL100S05; T40HFL10S05; T40HFL10S05; VS-T40HFL100S05; VS-T40HFL100S05; VST40HFL100S05; VST40HFL100S05

T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
T40HFL..
T70HFL..
T85HFL..
FORWARD CONDUCTION
PARAMETER
Maximum average
forward current
at case temperature
Maximum RMS
forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward
voltage drop
2
2
t for fusing
√t for fusing
VOLTAGE
CODE
100
10
20
40
60
80
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
SYMBOL
I
V
V
F(RMS)
I
I
S02, S05, S10
S02, S05, S10
S02, S05, S10
S02, S05, S10
V
I
F(TO)1
F(TO)2
F(AV)
FSM
I
2
r
r
2
FM
√t
f1
f2
t
S05, S10
S05, S10
CODE
t
rr
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
T
T
T
I
Average power = V
FM
J
J
J
J
= 25 °C, (16.7 % x π x I
= 25 °C, (I > π x I
= 25 °C, (16.7 % x π x I
= 25 °C, (I > π x I
(T-Modules), 40 A/70 A/85 A
= π x I
Fast Recovery Diodes
V
F(AV)
RRM,
PEAK REVERSE VOLTAGE
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
, T
TEST CONDITIONS
MAXIMUM REPETITIVE
J
= 25 °C, t
F(TO)
F(AV)
F(AV)
RRM
RRM
1000
100
200
400
600
800
)
)
x I
V
F(AV)
F(AV)
F(AV)
p
Sinusoidal half wave,
initial T
= 400 μs square wave
< I < π x I
< I < π x I
+ r
f
x (I
J
= T
F(RMS)
[e-mail]
F(AV)
F(AV)
J
maximum
)
2
)
)
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
RSM
T40HFL
, MAXIMUM
11 300
1100
1130
1030
0.82
0.84
1.60
475
500
400
420
800
730
150
300
500
700
900
7.0
6.8
40
63
V
T70HFL
34 600
3460
3160
2450
2230
0.87
0.90
2.77
2.67
1.73
110
830
870
700
730
70
70
Document Number: 93184
Revision: 19-May-10
I
T85HFL
RRM
85 500
AT T
1300
1370
1100
1150
8550
7810
6050
5520
0.84
0.86
2.15
2.07
1.55
133
85
MAXIMUM
J
100
μA
= 25 °C
UNITS
A
A
mΩ
°C
2
A
A
A
V
V
2
√s
s