CPV362M4K Vishay, CPV362M4K Datasheet
CPV362M4K
Specifications of CPV362M4K
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CPV362M4K Summary of contents
Page 1
... Thermal Resistance Parameter R (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction JC R (DIODE) Junction-to-Case, each diode, one diode in conduction JC R (MODULE) Case-to-Sink, flat, greased surface CS Wt Weight of module CPV362M4K PRELIMINARY Short Circuit Rated UltraFast IGBT 90° 125°C, Supply Voltage 360Vdc Max. 2500 -40 to +150 300 (0 ...
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... CPV362M4K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... GE 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 1 f, Frequency (KHz) of fundamental) RMS 100 150 Fig Typical Transfer Characteristics CPV362M4K 2. 0° ° tor = ulatio . ated V oltag e 1.46 1.17 0.88 0.59 0.29 0.00 10 100 50V CC 5µs PULSE WIDTH ...
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... CPV362M4K (° Fig Maximum Collector Current vs. Case Temperature . . 0 0.01 0.000 01 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 2 15V PULSE WIDTH 2.0 1 -60 -40 - Junction Temperature ( C) Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0.001 0. lar tio 1 100 120 140 160 ° ...
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... Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance SHORTED 100 Fig Typical Gate Charge vs 0.1 0. -60 -40 -20 Fig Typical Switching Losses vs. CPV362M4K = 400V = Total Gate Charge (nC) G Gate-to-Emitter Voltage 51 = 51Ohm 15V = 480V 1 100 120 140 160 ° Junction Temperature ( Junction Temperature ...
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... CPV362M4K 0 51Ohm 150 C ° 480V 15V GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 0.4 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 0 ° ° °C J 0.8 1.2 1.6 2.0 2.4 2.8 3 lta ° TIN ...
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... Fig Typical Stored Charge vs. di 100 ° ° 8. 1000 100 Fig Typical Recovery Current vs. di /dt f 10000 1000 I = 4.0A F 100 1000 100 /dt f CPV362M4K 16A 8 4. /µ ° ° 4. 8 16A /µ Fig Typical di /dt vs. di (rec)M 1000 ...
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... CPV362M4K 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d( td(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) Same type device .U. .T. 10 (off d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Ic tx ...
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... Figure 18e. Macro Waveforms for L 1000V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current CPV362M4K Test Circuit 480V @25°C C Test Circuit ...
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... CPV362M4K Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. Case Outline — IMS-2 62.43 (2.458) 3.91 (.154) 53.85 (2.120) 2X 21.97 (.865 3.94 (.155) 4.06 ± ...