CPV362M4K Vishay, CPV362M4K Datasheet - Page 4

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

CPV362M4K
Fig. 4 - Maximum Collector Current vs.
0.01
0.1
10
0.000 01
6
4
2
0
1
2 5
D = 0 .5 0
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0 .0 2
0 .0 1
0 .20
0 .10
0 .0 5
T , C a s e T e m p e ra tu re (°C )
Case Temperature
5 0
C
(T H E R M A L R E S P O N S E )
S IN G L E P U L S E
0.0001
7 5
1 0 0
t , R e c ta n g u lar P u ls e D u ra tio n (s e c )
V
0.001
1
1 2 5
G E
= 1 5 V
1 5 0
A
0.01
Fig. 5 - Typical Collector-to-Emitter Voltage
2.5
2.0
1.5
1.0
-60 -40 -20
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
T , Junction Temperature ( C)
N o te s :
1 . D u ty fac tor D = t
2 . P e a k T = P
J
0.1
0
20 40
J
D M
x Z
60
1
/ t
th J C
2
80 100 120 140 160
P
1
D M
I =
I =
I =
+ T
C
C
C
C
t
1
1.5
t
2
6
3
°
A
A
A
10