GA400TD25S Vishay, GA400TD25S Datasheet - Page 4

• Manufacturer Part Number: GA400TD25S
• Description: IGBT FAST 250V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD25S

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 36nF @ 30V
• Power - Max: 1350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Collector- Emitter Voltage Vceo Max: 250 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *GA400TD25S; VS-GA400TD25S; VS-GA400TD25S; VSGA400TD25S; VSGA400TD25S

GA400TD25S
Fig. 4 - Maximum Collector Current vs. Case
4
0 . 0 0 1
0 . 0 1
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
0 . 1
0
0 . 0 0 0 1
2 5
D = 0.5 0
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.0 2
0.0 1
T , Case Temperature (°C)
5 0
C
Temperature
(T H E R M A L R E S P O N S E )
0 . 0 0 1
S IN G LE P U LS E
7 5
1 0 0
0 . 0 1
t , R e cta ng ula r P u lse D u ratio n (se c)
1
1 2 5
1 5 0
0 . 1
A
Fig. 5 - Typical Collector-to-Emitter Voltage
2.0
1.5
1.0
-60 -40 -20
1

V
80 us PULSE WIDTH
GE
vs. Junction Temperature
Notes:
1. Duty factor D = t / t
2. Peak T = P
= 15V
T , Junction Temperature ( C)
J
J
0
1 0
20
DM
x Z
40
1
thJC
60
2
P
DM
+ T
80 100 120 140 160
1 0 0
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I =

I =

I =
C
C
C
C
t
1
t 2
800
400
200
°
A
A
A
1 0 0 0
A