GA400TD25S Vishay, GA400TD25S Datasheet - Page 5

• Manufacturer Part Number: GA400TD25S
• Description: IGBT FAST 250V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD25S

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 36nF @ 30V
• Power - Max: 1350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Collector- Emitter Voltage Vceo Max: 250 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *GA400TD25S; VS-GA400TD25S; VS-GA400TD25S; VSGA400TD25S; VSGA400TD25S

www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
60000
50000
40000
30000
20000
10000
60
55
50
45
40
35
30
0
0

V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25 C
= 150V
= 15V
= 400A
125°C
R
V
R
G
CE
G
°
10

, Gate Resistance
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
0V,
C
C
C
ge
gc
ce

C
C
C
ies

oes

res
20
+ C
+ C
10
f = 1MHz
gc ,
gc
C
ce
30
SHORTED
100
40
1000
100
10
20
16
12
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0

R
R
V
V

V
Fig. 8 - Typical Gate Charge vs.
V CC = 200V
I
GE
CC
G1
G
CC
C
=15 ;R
= 15V
= 150V
= Ohm
= 400V
= 440A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
400
G
G2
0
GA400TD25S
= 0
20
40
800
60
80 100 120 140 160
1200

I =

I =

I =
C
C
C
°
800
400
200
A
A
A
1600
5