CM100DU-24NFH Powerex Inc, CM100DU-24NFH Datasheet - Page 4

• Manufacturer Part Number: CM100DU-24NFH
• Description: IGBT MOD DUAL 1200V 100A NFH SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM100DU-24NFH

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 6.5V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 16nF @ 10V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 560W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 100A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA513
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2C-5015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1004

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM100DU-24NFH
Dual IGBTMOD™ NFH-Series Module
100 Amperes/1200 Volts
10
10
10
10
10
10
10
10
10
10
-1
3
2
1
0
1
0
2
1
0
10
10
10
REVERSE RECOVERY SWITCHING LOSS VS.
1
1
0
V
V
I
T
Inductive Load
C Snubber at Bus
E
j
CC
GE
= 100A
= 125°C
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
= 600V
= ±15V
COLLECTOR CURRENT
GATE RESISTANCE, R
SWITCHING LOSS VS.
GATE RESISTANCE
HALF-BRIDGE
(TYPICAL)
(TYPICAL)
(TYPICAL)
10
10
10
t
t
t
t
f
r
2
2
1
d(off)
d(on)
V
R
Inductive Load
C Snubber at Bus
V
T
CC
GE
j
C
G
C
V
V
R
T
Inductive Load
= 125°C
, (AMPERES)
, (AMPERES)
j
= 3.1Ω
CC
GE
G
G
= 125°C
= 600V
= 15V
, (Ω)
E
E
= 3.1Ω
= 600V
= 15V
SW(on)
SW(off)
E
rr
10
10
10
3
3
2
10
10
10
10
10
10
10
10
10
10
-1
-2
-3
3
2
1
2
1
0
0
10
10
10
REVERSE RECOVERY CHARACTERISTICS
1
0
V
V
R
T
Inductive Load
V
V
I
T
Inductive Load
C Snubber at Bus
-3
C
Single Pulse
T
Per Unit Base =
R
R
j
j
CC
GE
CC
GE
G
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 25°C
= 125°C
= 100A
0.22°C/W
(IGBT)
0.47°C/W
(FWDi)
= 3.1Ω
= 25°C
EMITTER CURRENT, I
= 600V
= 15V
= 600V
= ±15V
E
E
10
SW(on)
SW(off)
=
=
TRANSIENT THERMAL
GATE RESISTANCE, R
SWITCHING LOSS VS.
GATE RESISTANCE
-2
(IGBT & FWDi)
(TYPICAL)
(TYPICAL)
TIME, (s)
10
10
10
10
-1
-5
2
1
E
, (AMPERES)
G
, (Ω)
10
10
-4
0
I
t
rr
rr
10
10
10
10
3
2
-3
10
10
10
1
10
10
10
3
2
1
-1
-2
-3
10
10
10
20
16
12
8
4
0
2
1
0
10
REVERSE RECOVERY SWITCHING LOSS VS.
0
1
I
C
100 200
= 100A
EMITTER CURRENT, I
GATE CHARGE VS. V GE
GATE CHARGE, Q
EMITTER CURRENT
V
CC
(TYPICAL)
300
= 400V
10
E
2
400
rr
V
V
R
T
Inductive Load
C Snubber at Bus
E
j
, (AMPERES)
G
CC
GE
G
V
= 125°C
, (nC)
CC
= 3.1Ω
500 600 700
= 600V
= ±15V
= 600V
Rev. 11/09
10
3