CM150DU-24NFH Powerex Inc, CM150DU-24NFH Datasheet - Page 3

• Manufacturer Part Number: CM150DU-24NFH
• Description: IGBT MOD DUAL 1200V 150A NFH SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM150DU-24NFH

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 6.5V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 24nF @ 10V
• Power - Max: 650W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 650W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Distributorinventory: View
• Voltage: 1200V
• Current: 150A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA513
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2C-5015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CM150DU-24NFH
Dual IGBTMOD™ NFH-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Rev. 11/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
300
250
200
150
100
50
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
6
T
COLLECTOR-EMITTER VOLTAGE, V
T
j
j
= 25C
= 25
GATE-EMITTER VOLTAGE, V
8
OUTPUT CHARACTERISTICS
2
o
C
COLLECTOR-EMITTER
10
(TYPICAL)
(TYPICAL)
12
4
V
GE
= 20V
14
15
6
I
I
I
C
C
C
= 300A
= 150A
= 60A
GE
16
, (VOLTS)
CE
, (VOLTS)
8
14
13
12
11
10
18
9
8
10
20
R th(j-c) 'Q
R th(j-c) 'D
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
R G
300
250
200
150
100
10
10
10
50
0
3
2
1
0
0
EMITTER-COLLECTOR VOLTAGE, V
V
GE
Per 1/2 Module, Thermal Grease Applied
GATE-EMITTER VOLTAGE, V
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
Per FWDi 1/2 Module, T C Reference
Per FWDi 1/2 Module, T C Reference
1
= 10V
Per IGBT 1/2 Module, T C Reference
T
T
T
T
j
j
j
j
T C Reference Point Under Chips
= 25C
= 125C
5
= 25C
= 125C
FREE-WHEEL DIODE
Point per Outline Drawing
Point per Outline Drawing
Point per Outline Drawing
Per IGBT 1/2 Module,
(TYPICAL)
(TYPICAL)
2
10
Test Conditions
3
GE
, (VOLTS)
15
EC
4
, (VOLTS)
20
5
10
10
10
10
-1
9
8
7
6
5
4
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
Min.
-1
2.1
COLLECTOR-EMITTER VOLTAGE, V
—
—
—
—
—
V
V
GE
GE
COLLECTOR-CURRENT, I
50
= 0V
= 15V
T
T
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25C
= 125C
100
10
0.07
Typ.
—
—
—
—
—
0
(TYPICAL)
(TYPICAL)
150
Max.
0.19
0.35
0.13
0.21
200
C
10
21
—
, (AMPERES)
1
C
C
C
CE
oes
ies
res
250
, (VOLTS)
°C/W
°C/W
°C/W
°C/W
°C/W
Units
Ω
300
10
2
3