CM200DU-12F Powerex Inc, CM200DU-12F Datasheet

IGBT MOD DUAL 600V 200A F SER

CM200DU-12F

Manufacturer Part Number
CM200DU-12F
Description
IGBT MOD DUAL 600V 200A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM200DU-12F

Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
54nF @ 10V
Power - Max
590W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
590W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
835-1081
CM200DU-12F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CM200DU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CM200DU-12F
Manufacturer:
TI
Quantity:
101
Price:
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
M
A
B
C
D
E
G
H
K
F
J
L
B
C
W
1.18 +0.04/-0.02
T C MEASURED POINT
N
3.15±0.01
C2E1
Inches
3.70
1.89
0.43
0.16
0.71
0.02
0.53
0.91
0.83
0.67
M
C2E1
T
U
P - NUTS (3 TYP)
K
30.0 +1.0/-0.5
Millimeters
RTC
80.0±0.25
E2
V
A
D
94.0
48.0
11.0
18.0
13.5
23.0
21.2
17.0
U
4.0
0.5
K
E2
C1
Y
T
Dimensions
RTC
J
W
N
P
Q
R
S
U
V
X
Y
T
Z
H (4
PLACES)
X
S
L
Q (2
PLACES)
Dia. 0.26
Inches
M5
0.28
0.02
0.30
0.63
0.10
1.0
0.94
0.51
0.47
0.47
C1
F
F
G2
G1
E2
E1
E
G
Millimeters
R
6.5 Dia.
16.0
25.0
24.0
13.0
12.0
12.0
7.0
4.0
7.5
2.5
M5
CM200DU-12F
Trench Gate Design
Dual IGBTMOD™
200 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-12F is a
600V (V
IGBTMOD™ Power Module.
Type
CM
Free-Wheel Diode
Heat Sinking
CES
Current Rating
CE(sat)
Amperes
), 200 Ampere Dual
200
Volts (x 50)
V
12
CES
1
1

Related parts for CM200DU-12F

CM200DU-12F Summary of contents

Page 1

... Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F is a 600V (V ), 200 Ampere Dual CES IGBTMOD™ Power Module. Current Rating V CES Type ...

Page 2

... V = 10V GE(th 200A 15V, T CE(sat 200A 15V 300V 200A 200A does not exceed T j CM200DU-12F -40 to 150 -40 to 125 600 ±20 200 400* 200 400* 590 31 40 310 2500 Min. Typ. Max – – – – 25°C – 1.6 2 125° ...

Page 3

... Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts Dynamic Electrical Characteristics, T Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Turn-on Delay Time Load Rise Time Switch Turn-off Delay Time ...

Page 4

... Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 400 9 20V GE 300 9 200 8.5 100 8 7 COLLECTOR-EMITTER VOLTAGE (VOLTS) CE FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL 25° 1.0 2.0 3 ...

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