CM150E3U-24H Powerex Inc, CM150E3U-24H Datasheet - Page 2

• Manufacturer Part Number: CM150E3U-24H
• Description: IGBT MOD CHOP 1200V 150A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM150E3U-24H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 22nF @ 10V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 890W
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 5
• Distributorinventory: View
• Voltage: 1200V
• Current: 150A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA503
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

140
140
CM150E3U-24H
Chopper IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
150 C)
c
= 25 C, T
j
= 25 C unless otherwise specified
j
j
V
= 25 C unless otherwise specified
V
Symbol
Symbol
150 C)
CE(sat)
t
t
I
I
C
GE(th)
V
C
V
C
d(on)
d(off)
CES
GES
Q
Q
Q
j
t
t
oes
EC
FM
t
ies
res
t
rr
rr
G
= 25 C unless otherwise specified
r
f
rr
rr
V
I
I
C
CC
C
I
I
= 150A, V
I
I
F
F
= 150A, V
E
E
Load Switching Operation
= 600V, I
= 150A, Clamp Diode Part
V
= 150A, Clamp Diode Part
V
V
= 150A, di
= 150A, di
I
C
V
I
CC
R
CE
GE
V
E
CE
G
= 15mA, V
GE1
di
= 150A, V
Test Conditions
Test Conditions
= 600V, I
= V
F
= V
= 2.1 , Resistive
= 10V, V
/dt = -300A/ s
GE
= V
C
GE
CES
GES
j
j
= 150A, V
) does not exceed T
) does not exceed T
E
E
Symbol
= 15V, T
GE2
V
V
= 15V, T
/dt = -300A/ s
/dt = -300A/ s
T
V
I
I
, V
, V
CES
GES
CM
P
EM
T
I
I
stg
–
–
–
iso
CE
C
GE
C
E
GE
c
j
GE
CE
= 15V,
= 150A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
= 15V
j(max)
j(max)
rating.
rating.
CM150E3U-24H
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1200
2500
300*
300*
890
400
150
150
40
40
20
560
Typ.
Typ.
–
–
6
2.9
2.85
–
–
–
–
–
–
–
–
–
–
0.82
–
0.82
200
250
300
350
300
300
22
Max.
Max.
1
0.5
7.5
3.7
–
–
3.2
3.2
7.4
4.4
–
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
Volts
C
C
mA
nC
ns
ns
ns
ns
ns
ns
nf
nf
nf
A
C
C