CM150E3U-24H Powerex Inc, CM150E3U-24H Datasheet - Page 3

IGBT MOD CHOP 1200V 150A U SER

CM150E3U-24H

Manufacturer Part Number
CM150E3U-24H
Description
IGBT MOD CHOP 1200V 150A U SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM150E3U-24H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
22nF @ 10V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
150A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
890W
Operating Temperature Range
-40°C To +150°C
No. Of Pins
5
Distributorinventory
View
Voltage
1200V
Current
150A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150E3U-24H
Manufacturer:
Westcode
Quantity:
1 000
Part Number:
CM150E3U-24H
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM150E3U-24H
Quantity:
55
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
CM150E3U-24H
Chopper IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
300
250
200
150
100
50
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
V
T
COLLECTOR-EMITTER VOLTAGE, V
T
GE
j
j
= 25
GATE-EMITTER VOLTAGE, V
= 25 C
= 20V
OUTPUT CHARACTERISTICS
o
I
2
4
C
C
COLLECTOR-EMITTER
= 150A
(TYPICAL)
(TYPICAL)
4
8
15
12
6
I
GE
C
10
12
11
, (VOLTS)
= 300A
9
8
I
CE
C
16
8
, (VOLTS)
= 60A
10
20
R
R
Symbol
R
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
300
250
200
150
100
10
10
10
50
Q
D
0
3
2
1
1.0
0
EMITTER-COLLECTOR VOLTAGE, V
V
T
j
CE
j
= 25 C
GATE-EMITTER VOLTAGE, V
= 25 C unless otherwise specified
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
= 10V
1.5
T
T
Per Module, Thermal Grease Applied
4
j
j
= 25 C
= 125 C
FREE-WHEEL DIODE
Clamp Diode Part
2.0
(TYPICAL)
(TYPICAL)
8
Test Conditions
Per FWDi
Per IGBT
2.5
12
GE
, (VOLTS)
EC
3.0
16
, (VOLTS)
3.5
20
10
10
10
10
-1
5
4
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
f = 1MHz
V
Min.
GE
GE
COLLECTOR-CURRENT, I
50
= 0V
= 15V
T
T
j
j
CAPACITANCE VS. V
COLLECTOR-EMITTER
= 25 C
= 125 C
100
10
0.020
0
Typ.
(TYPICAL)
(TYPICAL)
150
200
C
10
, (AMPERES)
Max.
0.14
0.24
0.24
1
CE
CE
250
C
, (VOLTS)
C
C
oes
ies
res
Units
C/W
C/W
C/W
C/W
300
10
2
141
141

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