CM1400DU-24NF Powerex Inc, CM1400DU-24NF Datasheet - Page 3

• Manufacturer Part Number: CM1400DU-24NF
• Description: IGBT MOD DUAL 1200V 1400A MEGA
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM1400DU-24NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 1400A
• Current - Collector (ic) (max): 1400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 220nF @ 10V
• Power - Max: 3900W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 1.4kA
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 3.9kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Distributorinventory: View
• Voltage: 1200V
• Current: 1400A
• Circuit Configuration: Dual
• Rohs Compliant: No
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: 835-1007

CM1400DU-24NF
Mega Power Dual™ IGBTMOD
1400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
2800
2400
2000
1600
1200
800
400
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
COLLECTOR-EMITTER VOLTAGE, V
T
j
1
GATE-EMITTER VOLTAGE, V
15
= 25°C
OUTPUT CHARACTERISTICS
2
4
I
C
COLLECTOR-EMITTER
I
C
= 1400A
3
= 560A
13
V
(TYPICAL)
(TYPICAL)
GE
8
4
= 20V
5
12
6
GE
7
, (VOLTS)
I
CE
C
8
T
16
j
, (VOLTS)
= 2800A
8
= 25° C
12
11
10
9
9 10
20
R
R
R
R
Symbol
R
th(j-c')
th(j-c')
th(j-c)
th(j-c)
th(c-f)
R
G
2800
2400
2000
1600
1200
800
400
10
10
10
Q
D
Q
D
0
4
3
2
0.5
0
j
EMITTER-COLLECTOR VOLTAGE, V
V
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
CE
1.0
GATE-EMITTER VOLTAGE, V
Per FWDi 1/2 Module, T
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
= 10V
T
T
4
T
T
j
j
C
C
= 25°C
= 125°C
1.5
FREE-WHEEL DIODE
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
Reference Point Under Chip
Per IGBT 1/2 Module,
(TYPICAL)
(TYPICAL)
8
2.0
Test Conditions
2.5
12
GE
3.0
, (VOLTS)
T
T
EC
j
j
16
= 25°C
= 125°C
, (VOLTS)
3.5
C
C
C
Reference
Reference
Reference
4.0
20
10
10
10
10
0
Min.
—
—
5
4
3
2
1
3
2
1
0
10
–
–
–
0.22
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
GE
GE
400
COLLECTOR-CURRENT, I
= 15V
= 0V
T
T
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
600
—
—
—
Typ.
10
–
–
0.016
0
1200
(TYPICAL)
(TYPICAL)
1600
Max.
0.032
0.053
0.014
0.023
–
2.2
C
10
, (AMPERES)
2000
1
C
C
C
CE
ies
oes
res
, (VOLTS)
2400
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Ω
2800
10
2
3