CPV364M4F Vishay, CPV364M4F Datasheet
CPV364M4F
Specifications of CPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
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CPV364M4F Summary of contents
Page 1
... R (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction JC R (DIODE) Junction-to-Case, each diode, one diode in conduction JC R (MODULE) Case-to-Sink, flat, greased surface CS Wt Weight of module CPV364M4F 90° 125°C, Supply Voltage 360Vdc -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55-0.8 N•m) ...
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... CPV364M4F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... T = 150° 20µs PULSE WIDTH Collector-to-Emitter Voltage ( Fig Typical Output Characteristics 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 15V Fig Typical Transfer Characteristics CPV364M4F 0° ° tor = ula tio . ted V o lta 150° 25° 5µs PULSE WIDTH Gate-to-Emitter Voltage ( 7.34 5 ...
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... CPV364M4F Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0. 0.02 0.01 S ING LE P ULS E (T HERMA L RE SPO NS E) 0.01 0.0000 1 0.000 1 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 125 150 ° C) Fig Typical Collector-to-Emitter Voltage 0 .00 1 ...
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... Collector-to-Em itter Voltage ( Fig Typical Capacitance vs. Collector-to-Emitter Voltage 1. 480V 15V GE ° 15A C 1.40 1.35 1. Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance SHORTED 0 CPV364M4F 400V 15A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 10Ohm 15V 480V CC 1 -60 -40 - ...
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... CPV364M4F 6 10Ohm G ° 150 480V CC 5 15V GE 4.0 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1000 0° 5° 5° orwa rd V olta ge D rop - 20V 125 C J 100 ...
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... / /µs) f Fig Typical Reverse Recovery vs ° ° 5 /dt - (A/ µs) f Fig Typical Stored Charge vs ° ° . Fig Typical Recovery Current vs /dt f CPV364M4F ° ° 30A . / µ ° ° . / /µ Fig Typical di /dt vs. di (rec / /dt f ...
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... CPV364M4F 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ATE VO LTA . 10 td( on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Same t ype device as D.U.T. D.U. d(on) r d(off) f Fig. 18b - +V g DUT V O LTA URR E NT Ipk Ic t2 ...
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... V 60 00µ F 100 ATE D.U. 480V CPV364M4F DE VICE UNDE CURR . D.U.T. CURR 480V @25°C C ...
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... CPV364M4F Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. 3.91 ( .154) 2X 21.97 (.865 3.94 (.155) 4.06 ± 0.51 (.160 ± .020) 5.08 (.200) 6X WORLD HEADQUARTERS: 233 Kansas St ...