CPV364M4F Vishay, CPV364M4F Datasheet - Page 5
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CPV364M4F
Manufacturer Part Number
CPV364M4F
Description
IGBT SIP MODULE 600V 15A IMS-2
Manufacturer
Vishay
Specifications of CPV364M4F
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 27A
Current - Collector (ic) (max)
27A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
*CPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CPV364M4FPBF
Manufacturer:
Vishay Semiconductors
Quantity:
135
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
Fig. 9 - Typical Switching Losses vs. Gate
1.45
1.40
1.35
1.30
0
1
0
Fig. 7 - Typical Capacitance vs.
V
V
T
V
I
J
C
CC
GE
C E
Collector-to-Emitter Voltage
= 25 C
= 15V
= 480V
= 15A
, Collector-to-Em itter Voltage (V)
R , Gate Resistance (Ohm)
10
V
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
G
GE
C
C
C
°
ies
o es
res
= 0V
Resistance
20
1 0
f = 1 MHz
30
SHORTED
40
1 0 0
A
50
0.1
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G
CC
C
= 10Ohm
= 15V
= 480V
= 400V
= 15A
20
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
G
0
40
CPV364M4F
20
40
60
60
80 100 120 140 160
80
I =
I =
I =
C
C
C
°
100
7.5
30
15
A
A
A
120