CPV364M4F Vishay, CPV364M4F Datasheet - Page 3
![IGBT SIP MODULE 600V 15A IMS-2](/photos/14/29/142934/vs-cpv363m4u_sml.jpg)
CPV364M4F
Manufacturer Part Number
CPV364M4F
Description
IGBT SIP MODULE 600V 15A IMS-2
Manufacturer
Vishay
Specifications of CPV364M4F
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 27A
Current - Collector (ic) (max)
27A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
*CPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CPV364M4FPBF
Manufacturer:
Vishay Semiconductors
Quantity:
135
Document Number: 93610
1 0 0
25
20
15
10
Fig. 2 - Typical Output Characteristics
5
0
1 0
0.1
1
1
T = 25°C
V
J
C E
, Collector-to-Emitter Voltage (V)
T = 150°C
J
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
G E
= 15V
(Load Current = I
1
f, Frequency (KHz)
1 0
A
RMS
of fundamental)
1 0 0
Fig. 3 - Typical Transfer Characteristics
1 0
1
5
T = 150°C
J
10
V
G E
6
T c = 9 0° C
T j = 1 25 ° C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
, Gate-to-Emitter Voltage (V)
T = 25°C
J
CPV364M4F
7
V
5µs PULSE WIDTH
8
C C
www.vishay.com
= 50V
100
9
7.34
5.87
4.40
2.94
1.47
0.00
1 0
3
A