GA150TS60U Vishay, GA150TS60U Datasheet - Page 2
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GA150TS60U
Manufacturer Part Number
GA150TS60U
Description
IGBT FAST 600V 150A INT-A-PAK
Manufacturer
Vishay
Datasheet
1.GA150TS60U.pdf
(10 pages)
Specifications of GA150TS60U
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
14nF @ 30V
Power - Max
440W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GA150TS60U
Manufacturer:
IR
Quantity:
530
Part Number:
GA150TS60U
Quantity:
55
GA150TS60U
Electrical Characteristics @ T
Dynamic Characteristics - T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
fe
V
(BR)CES
CE(on)
GE(th)
FM
on
off (1)
ts (1)
ies
oes
res
g
ge
gc
rr
(rec)
2
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 14000 —
—
—
—
—
—
—
9696
2000
152
624
212
241
145
336
227
860
180
172
113
1.7
1.7
-11
3.3
3.2
6.0
87
12
19
—
—
—
—
—
250
937
130
317
2.3
6.0
1.0
—
—
—
—
10
—
—
33
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
mA
A/µs
nA
nC
mJ
nC
V
S
V
pF
ns
ns
A
V
V
V
I
V
V
V
I
I
V
V
I
T
R
I
V
V
V
V
ƒ = 1 MHz
I
R
R
V
di/dt =1300A/µs
C
F
F
C
C
C
J
GE
GE
GE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 150A, V
= 150A, V
= 750µA
= 94A
= 150A
= 150A
= 25°C
= V
= 25V, I
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 27 , R
= ±15V
= 0V
= 30V
= 27
= 0
360V
360V
GE
, I
C
CE
CE
GE
C
C
C
C
Conditions
GE
Conditions
= 1mA
G2
= 750µA
= 150A
= 150A
= 150A, T
= 600V
= 600V, T
= 0V, T
= 0V
= 0 ,
www.irf.com
J
J
= 125°C
J
= 125°C
= 125°C