GA150TS60U Vishay, GA150TS60U Datasheet - Page 4

• Manufacturer Part Number: GA150TS60U
• Description: IGBT FAST 600V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 14nF @ 30V
• Power - Max: 440W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA150TS60U
Fig. 4 - Maximum Collector Current vs. Case
4
160
120
80
40
0
0 . 0 1
0 . 1
25
0 . 0 0 0 1
1
D = 0.5 0
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0 .1 0
0 .05
0 .02
0 .0 1
0.20
50
T , Case Temperature (
C
Temperature
(Th e rm a l R e sis ta n c e )
0 . 0 0 1
75
S in g le P u ls e
100
t , R ec ta ng ular P u lse D u ra tio n (Se c o n d s)
0 . 0 1
1
°
125
C)
150
0 . 1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20

V
80 us PULSE WIDTH
1
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
1 0
20
DM
40
x Z
1
60
/ t
thJC
2
P
DM
80 100 120 140 160
+ T
1 0 0

I =

I =

I =
www.irf.com
C
C
C
C
t
1
t 2
300
150
75
°
A
A
A
1 0 0 0