GA250TS60U Vishay, GA250TS60U Datasheet - Page 3

• Manufacturer Part Number: GA250TS60U
• Description: IGBT FAST 600V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 23.4nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: VS-GA250TS60U; VS-GA250TS60U; VSGA250TS60U; VSGA250TS60U

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1000
200
160
120
100
80
40
10
0
Fig. 2 - Typical Output Characteristics
0.1
1
V
CE

T = 25 C
S q u a re w a v e :
J
, Collector-to-Emitter Voltage (V)
o
2
60 % of ra ted
Id e a l d io d e s
I
vo ltag e


Fig. 1 - Typical Load Current vs. Frequency
T = 150 C
J
V
20µs PULSE WIDTH
GE
25
3
(Load Current = I
= 15V
o
1
f, Frequency (KHz)
4
RMS
of fundamental)
1000
100
10
1
Fig. 3 - Typical Transfer Characteristics
5

T = 150 C
J
V
25
GE
10
o
6
, Gate-to-Emitter Voltage (V)
GA250TS60U
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
J
sink

T = 25 C
J
= 9 0 ° C
7
o

V
5µs PULSE WIDTH
V
80µs PULSE WIDTH
CC
CE
170
= 50V
= 25V
W
8
100
3
9