GA250TS60U Vishay, GA250TS60U Datasheet - Page 4

• Manufacturer Part Number: GA250TS60U
• Description: IGBT FAST 600V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 23.4nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: VS-GA250TS60U; VS-GA250TS60U; VSGA250TS60U; VSGA250TS60U

GA250TS60U
Fig. 4 - Maximum Collector Current vs. Case
4
250
200
150
100
0 . 0 1
50
0.1
0
0 . 0 0 0 1
1
25
D = 0 .5 0
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0 .2 0
0 .0 5
0 .1 0
0.02
0 .0 1
50
T , Case Temperature (
C
Temperature
0 . 0 0 1
75
(T H E R M A L R E S P O N S E )
S IN G L E P U L S E
100
0 . 0 1
t , R e cta n g u la r P u ls e D u ra tio n (s e c )
°
125
1
C)
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-60 -40 -20
1

V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t
2. Peak T = P
T , Junction Temperature ( C)
J
0
1 0
J
20
DM
40
x Z
1
60
/ t
thJC
2
P
80 100 120 140 160
DM
1 0 0
+ T
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I =

I =

I =
C
C
C
C
t
1
62.5
250
125
t 2
°
A
A
A
1 0 0 0
A