GA200SA60U Vishay, GA200SA60U Datasheet - Page 5
![IGBT UFAST 600V 100A SOT227](/photos/14/29/142909/mfg_sot-227_package_sml.jpg)
GA200SA60U
Manufacturer Part Number
GA200SA60U
Description
IGBT UFAST 600V 100A SOT227
Manufacturer
Vishay
Specifications of GA200SA60U
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
16.5nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*GA200SA60U
VS-GA200SA60U
VS-GA200SA60U
VSGA200SA60U
VSGA200SA60U
VS-GA200SA60U
VS-GA200SA60U
VSGA200SA60U
VSGA200SA60U
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GA200SA60U
Manufacturer:
IR
Quantity:
1 000
Part Number:
GA200SA60U
Quantity:
62
Part Number:
GA200SA60UP
Quantity:
63
Company:
Part Number:
GA200SA60UPBF
Manufacturer:
AVX
Quantity:
25 000
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
30000
25000
20000
15000
10000
5000
60
50
40
30
20
10
0
0
0
V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
= 25
= 480V
= 15V
= 200A
10
C
C
C
R
V
ies
oes
res
G
Collector-to-Emitter Voltage
CE
R
°
G
, Gate Resistance (Ohm)
V
C
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
, Gate Resistance (Ω)
GE
ies
res
oes
20
=
=
=
=
0V,
C
C
C
ge
gc
ce
30
+ C
+ C
10
f = 1MHz
gc ,
gc
40
C
ce
SHORTED
50
100
60
100
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0
R
V
V
V
I
GE
CC
G
CC
C
Fig. 8 - Typical Gate Charge vs.
= 15V
= 480V
= Ohm
= 400V
= 110A
T , Junction Temperature ( C )
Junction Temperature
2.0
Q , Total Gate Charge (nC)
J
200
G
Ω
0
GA200SA60U
Gate-to-Emitter Voltage
20
40
400
60
80 100 120 140 160
600
I
I =
I =
I =
C
C
C
C
°
=
400
200
100
350
A
A
A
A
5
800