50MT060WH Vishay, 50MT060WH Datasheet - Page 2

• Manufacturer Part Number: 50MT060WH
• Description: IGBT WARP 600V 114A MTP
• Manufacturer: Vishay

Specifications of 50MT060WH

• Igbt Type: PT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 100A
• Current - Collector (ic) (max): 114A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 7.1nF @ 30V
• Power - Max: 658W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 12-MTP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *50MT060WH; VS-50MT060WH; VS-50MT060WH; VS50MT060WH; VS50MT060WH

Electrical Characteristics @ T
2
Switching Characteristics @ T
Thermistor Specifications
50MT060WH
I27120 rev. D 02/03
V
V
V
I
V
I
R
Q
Q
Q
E
E
E
E
E
E
C
C
C
trr
Irr
Qrr
trr
Irr
Qrr
(1)
CES
GES
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
on
off
ts
0
ies
oes
res
g
ge
gc
T
(1)
(1) (2)
0
,T
1
are thermistor's temperatures
Parameters
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Collector-to-Emiter Leaking
Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameters
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Resistance
Sensitivity index of the thermistor
material
Parameters
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
(2)
Min Typ Max Units Test Conditions
600
Min Typ Max Units Test Conditions
Min Typ Max Units Test Conditions
3
R
R
0
1
= exp
4000
1.72
1.58
1.49
7100
0.26
1.46
0.73
1.66
2.39
12.7
331
133
510
140
340
137
870
2.3
2.5
1.9
1.2
8.3
30
44
82
[
± 250
3.15
2.17
1.80
1.68
2.17
1132
10.6
14.8
385
176
514
153
3.2
0.4
10
52
97
6
(
1
T
0
mA
1
T
k
nA
nC
mJ
mJ
nC
nC
pF
ns
ns
K
V
V
A
A
1
)]
V
V
V
V
I
V
V
I
I
I
V
V
V
f = 1.0 MHz
V
V
T
T
T
I
Internal gate resistors
I
Energy losses include tail and diode reverse
recovery
Internal gate resistors
I
Energy losses include tail and diode reverse
recovery,
V
V
di/dt = 200A/µs
di/dt = 200A/µs
T
C
C
C
F
F
F
C
J
0
0
1
GE
GE
GE
GE
GE
GE
GE
CC
GE
GE
CC
CC
CC
= 50A, V
= 50A, V
= 50A, V
= 50A, V
= 100A, V
= 52A
= 125°C
= 0.5mA
= 25°C
= 25°C
= 85°C
= 15V
= 0V
= 30V
= 200V, I
= 200V, I
= 400V
= 0V, I
= 15V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ± 20V
T
CC
CC
J
= 150°C
C
GE
GE
= 480V, V
= 480V, V
CE
CE
C
C
GE
C
C
C
= 500µA
= 0V
= 50A
= 50A
= 100A
= 0V, T
= 50A
= 50A, T
= 600V
= 600V, T
= 0V, T
(
GE
(
GE
see Electrical Diagram
see Electrical diagram
J
= 15V, L = 200µH
= 15V, L = 200µH
J
J
= 150°C
www.irf.com
= 25°C
= 150°C
J
= 150°C
)
)